FS8205A Dual N Channel Power MOSFET

The FS8205A consists a Dual N Channel Power Mosfet in TSSOP-8 package. Its most widely used in battery charging applications. The chip has drain-source breakdown voltage of 20V. It has continuous source drain current of 0.83A.

The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology
to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is
suitable for use as a load switch .
FEATURES
l VDS =20 V
l ID =6A
l Low on-state resistance Fast switching
RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A)
RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A)
RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A)
l Lead free product is acquired
l Surface Mount Package
APPLICATION
l Battery protection
l Load switch
l Power management

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