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BC586

  • Collector-Emitter Volt (Vceo): 65V
  • Collector-Base Volt (Vcbo): 80V
  • Collector Current (Ic): 0.1A
  • hfe: 110-800 @ 2mA
  • Power Dissipation (Ptot): 310mW
  • Current-Gain-Bandwidth (ftotal): 150MHz
  • Type: PNP

10.00

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Availability: 20 in stock (can be backordered)

Type Designator: BC586

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: –

Package: TO92

BC586 Transistor Equivalent Substitute – Cross-Reference Search

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Datasheet

 

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